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| UNISONIC TECHNOLOGIES CO., LTD 6N40 Preliminary Power MOSFET 6 Amps, 400 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N40 is an N-Channel enhancement mode Power FET using UTC's perfect planar stripe, DMOS technology to provide customers with superior switching performance and minimum on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N40 is generally used in applications , such as electronic lamp ballasts based on half bridge topology and high efficiency switched mode power supplies. FEATURES * 6A, 400V, RDS(ON)=1.0 @ VGS=10V * Fast switching speed * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 6N40L-TF3-T 6N40G-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source 1 G Pin Assignment 2 3 D S Packing Tube www.unisonic.com.tw Copyright (c) 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-487.a 6N40 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 1) IAR 6 A Continuous ID 6 (Note 6) A Drain Current 24(Note 6) A Pulsed (Note 1) IDM Single Pulsed (Note 2) EAS 270 mJ Avalanche Energy Repetitive (Note 1) EAR 7.3 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation PD 38 W Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL JA JC RATINGS 62.5 3.31 UNIT C/W C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-487.a 6N40 PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified) SYMBOL BVDSS TEST CONDITIONS MIN 400 0.54 1 10 +100 -100 2.0 0.83 4.7 480 80 15 16 2.3 8.2 13 65 21 38 4.0 1 TYP MAX UNIT V V/C A A nA nA V S pF pF pF nC nC nC ns ns ns ns A A V ns C VGS=0V, ID=250A ID=250A, Breakdown Voltage Temperature Coefficient BVDSS/TJ Referenced to 25C VDS=400V, VGS=0V Drain-Source Leakage Current IDSS VDS=320V, TJ=125C Forward VDS=0V ,VGS=+30V Gate-Source Leakage Current IGSS Reverse VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A Forward Transconductance gFS VDS=40V, ID=3A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=320V, VGS=10V, ID=6A Gate-Source Charge QGS (Note 4,5) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=200V, ID=6A, RG=25 (Note 4,5) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =6A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=6A, dIF/dt=100A/s (Note 4) Body Diode Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=13.7mH, IAS=6A, VDD= 50V, RG=25, Starting TJ=25C 3. ISD 6A, di/dt 200A/s, VDD BVDSS, Starting TJ=25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature 6. Drain current limited by maximum junction temperature 625 105 20 20 35 140 55 85 6 24 1.4 230 1.7 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-487.a 6N40 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-487.a 6N40 Gate Charge Test Circuit Preliminary Power MOSFET Gate Charge Waveforms VGS QG Same Type as DUT 12V 200nF 50k VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-487.a 6N40 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-487.a |
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